A Study on Imprint Behavior of Ferroelectric Hafnium Oxide Caused by High‐Temperature Annealing
نویسندگان
چکیده
Hafnium oxide is found to be a favorable material for ferroelectric nonvolatile memory devices. Its compatibility with complementary metal–oxide–semiconductor processes, the relatively low crystallization temperature when zirconium-doped, and thickness scaling are among advantageous properties of hafnium oxide. Different requirements must fulfilled different applications Herein, high-temperature annealing operation conditions analyzed in order investigate memories automotive applications. A strong imprint behavior (shift coercive voltages) observed after hafnium–zirconium–oxide thin films at temperatures varied between 100 200 °C. The significant challenge many Therefore, reduce/recover undesirable caused by treatment, two ways successfully examined delineated here: endurance cycling applying high electric fields.
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ژورنال
عنوان ژورنال: Physica Status Solidi A-applications and Materials Science
سال: 2023
ISSN: ['1862-6300', '1862-6319']
DOI: https://doi.org/10.1002/pssa.202300067